SEMICONDUCTOR
KRC101M~KRC106M
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
A
・With Built-in Bias Resistors.
O
F
・Simplify Circuit Design.
・Reduce a Quantity of Parts and Manufacturing Process.
H
G
M
C
E
TYPE NO.
R1(kΩ)
R2(kΩ)
KRC101M
4.7
4.7
KRC102M
10
10
KRC103M
22
22
KRC104M
47
2.2
4.7
3
N
47
KRC106M
2
47
KRC105M
1
K
D
J
BIAS RESISTOR VALUES
EQUIVALENT CIRCUIT
E
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00+ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
47
OUT
L
1. EMITTER
R1
2. COLLECTOR
IN
R2
COMMON
3. BASE
TO-92M
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Output Voltage
SYMBOL
KRC101M～106M
RATING
UNIT
VO
50
V
KRC101M
20, -10
KRC102M
30, -10
KRC103M
40, -10
VI
Input Voltage
V
KRC104M
40, -10
KRC105M
12, -5
KRC106M
20, -5
IO
KRC101M～106M
Junction Temperature
Storage Temperature Range
2008. 11. 20
Revision No : 4
mA
400
mW
Tj
150
℃
Tstg
Power Dissipation
100
PD
Output Current
-55～150
℃
1/6
