1SS311
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS311
High Voltage,High Speed Switching Applications
Low forward voltage
: VF = 0.94V (typ.)
High voltage
Unit: mm
: VR = 400V (min)
Fast reverse recovery time : trr = 1.5ns (typ.)
Small total capacitance
: CT = 3.2pF (typ.)
Small package
: SC−59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300
mA
Maximum (peak) reverse voltage
Average forward current
IO
100
mA
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55∼125
°C
Surge current (10ms)
JEDEC
―
JEITA
SC−61
Note: Using continuously under heavy loads (e.g. the application of high
1−3G1B
TOSHIBA
temperature/current/voltage and the significant change in
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
―
VF (2)
Min
Typ.
Max
IF = 10mA
―
0.80
―
―
IF = 100mA
―
0.94
1.20
IR (1)
―
VR = 300V
―
―
0.1
IR (2)
―
VR = 400V
―
―
1.0
Total capacitance
CT
―
VR = 0, f = 1MHz
―
3.2
5.0
pF
Reverse recovery time
trr
―
IF = 10mA
―
1.5
―
μs
Characteristic
Forward voltage
Reverse current
Test Condition
Unit
V
μA
Marking
1
2007-11-01
