PROFET® BTS 432 E2
Smart Highside Power Switch
Features
Product Summary
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
IL(ISO)
11
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with autorestart and hysteresis
V
V
V
V
mΩ
A
A
A
5
5
Application
5
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
1
1
Straight leads
SMD
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
R bb
Voltage
Overvoltage
Current
protection
limit
3
Gate
source
+ V bb
protection
V Logic
Voltage
sensor
2
Charge pump
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection
GND
®
PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 14
1999-Mar.-22
