NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
FZT690B
TYPICAL CHARACTERISTICS
0.8
- (Volts)
IC/IB=10
- (Volts)
-55°C
+25°C
+100°C
+175°C
Tamb=25°C
IC/IB=200
IC/IB=100
0.8
0.6
0.4
IC/IB=100
0.6
V
V
C
E
C
B
ABSOLUTE MAXIMUM RATINGS
0.4
0.2
FZT690B
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A
* Gain of 400 at IC=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
PARAMETER
0.2
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
0.1
1
0.01
10
1
10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
45
VCEO
45
V
VEBO
5
V
Peak Pulse Current
0.1
VCBO
Emitter-Base Voltage
0
0.01
Collector-Emitter Voltage
ICM
6
A
Continuous Collector Current
0
IC
3
A
Power Dissipation at Tamb=25°C
+100°C
+25°C
-55°C
1.0
1K
0.8
0.6
- (Volts)
1.2
0.01
0.1
0
1
I+ - Collector Current (Amps)
1.6
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
10
VCE=2V
- (Volts)
1.4
1.0
0.1
0.6
IE=100µ A
ICBO
0.1
µA
VCB=35V
IEBO
0.1
µA
VEB=4V
VCE(sat)
0.1
0.5
V
V
IC=0.1A, IB=0.5mA*
IC=1A, IB=5mA*
VBE(sat)
0.9
V
IC=1A, IB=10mA*
0.9
V
IC=1A, VCE=2V*
DC
1s
100ms
10ms
1ms
100µs
VBE(on)
hFE
500
400
150
50
150
IC=100mA,VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=3A, VCE=2V*
MHz IC=50mA,VCE=5V,f=50MHz
Transition Frequency
0.2
0
IC=10mA*
V
Base-Emitter Turn-On Voltage
0.4
0
V
V(BR)EBO 5
Static Forward Current
Transfer Ratio
1
1.2
0.8
V
10
V(BR)CEO 45
Emitter-Base Breakdown
Voltage
Base-Emitter Saturation
Voltage
0.1
IC=100µ A
Collector-Emitter Saturation
Voltage
0.01
V
Emitter Cut-Off Current
10
1
V(BR)CBO 45
Collector Cut-Off Current
0.4
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
.
Collector-EmitterBreakdown
V
0
W
°C
Collector-Base Breakdown
Voltage
1.0
0.2
0
2
-55 to +150
PARAMETER
1.2
0.6
h
0.2
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.4
0.8
500
0.4
IC/IB=100
Ptot
Operating and Storage Temperature Range
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
- Typical Gain
1.4
h
- Normalised Gain
1.6
VCE=2V
0.01
0.1
0.01
0.1
1
1
10
10
I+ - Collector Current (Amps)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 222
100
fT
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
16
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
33
1300
ns
ns
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 221
