SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
FZT751
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
TYPICAL CHARACTERISTICS
0.6
td
IB1 =IB2=IC/10
tr
tf
V
0.2
600
100
500
80
400
60
0
0.0001
0.001
0.01
0.1
1
COMPLEMENTARY TYPE
300
ts
FZT651
C
B
td
PARTMARKING DETAIL
tf
40
tr
FZT751
ABSOLUTE MAXIMUM RATINGS.
200
20
100
0
0.1
E
700
120
IC /I B =10
0.3
C
ns
140
0.4
Switching time
- (Volts)
ts
ns
0.5
FZT751
0
PARAMETER
10
0.1
I - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
C
VALUE
UNIT
VCBO
-80
V
Collector-Emitter Voltage
I - Collector Current (Amps)
C
SYMBOL
Collector-Base Voltage
1
VCEO
-60
V
Emitter-Base Voltage
V
-6
A
IC
-3
A
Power Dissipation at Tamb=25°C
225
- (Volts)
VCE =2V
1.0
IC /I B=10
125
V
h
0.8
75
0.6
0
0.01
0.1
1
10
0.0001
0.01
0.001
0.1
1
I - Collector Current (Amps)
10
I - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
C
C
1.2
1
1.0
VC E=2V
DC
1s
100ms
10ms
1ms
100µs
0.8
V
0.1
0.6
0.01
0.001
0.01
0.1
1
10
I - Collector Current (Amps)
0.1
1
10
VCE - Collector Emitter Voltage (V)
C
Safe Operating Area
VBE(on) v IC
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
SYMBOL MIN.
V(BR)CBO -80
TYP.
MAX.
UNIT
V
CONDITIONS.
IC=-100µA
V(BR)CEO
-60
V
IC=-10mA*
V(BR)EBO
-5
V
IE=100µA
µA
µA
µA
VBE(sat)
-0.15
-0.45
-0.9
-0.1
-10
-0.1
0.3
0.6
-1.25
V
V
V
VCB=-60V
VCB=-60V,T =100°C
VEB=-4V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-1A, IB=-100mA*
VBE(on)
-0.8
-1.0
V
IC=-1A, VCE=-2V*
ICBO
amb
IEBO
VCE(sat)
hFE
70
100
80
40
200
200
170
150
fT
100
140
MHz
IC=-100mA, VCE =-5V
f=100MHz
Switching Times
ton
40
ns
toff
450
ns
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
pF
VCB=-10V, f=1MHz
IC=-50mA, VCE =-2V*
IC=-500mA, VCE =-2V*
IC=-1A, VCE =-2V*
IC=-2A, VCE =-2V*
300
100
Output Capacitance
30
Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 235
W
°C
Transition Frequency
Single Pulse T
est at Tamb=25°C
0.0001
2
-55 to +150
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
10
0.4
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.2
175
Ptot
Operating and Storage Temperature Range
1.4
- Gain
-5
ICM
Continuous Collector Current
- (Volts)
VEBO
Peak Pulse Current
3 234