JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BC807-16LT1
BC807-25LT1
BC807-40LT1
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
W (Tamb=25℃)
2. 4
1. 3
A
V
0. 95
0. 4
-50
0. 95
-0.5
1. 9
Collector current
ICM:
Collector-base voltage
VCBO:
0.3
2. 9
PCM:
1. 0
FEATURES
Power dissipation
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
VCBO
Ic= -10µA, IE=0
-50
V
Collector-emitter breakdown voltage
VCEO
Ic= -10mA, IB=0
-45
V
Emitter-base breakdown voltage
VEBO
IE= -1µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -45V, IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE= -40V, IB=0
-0.2
µA
Emitter cut-off current
IEBO
VEB= -4V, IC=0
-0.1
µA
hFE(1)
VCE= -1V, IC= -100mA
DC current gain
807-16
250
160
807-40
100
400
250
807-25
600
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50 mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= -500 mA, IB= -50mA
-1.2
V
Transition frequency
DEVICE MARKING
BC807-16LT1=5A1; BC807-25LT1=5B; BC807-40LT1=5C
fT
VCE= -5 V, IC= -10mA
f=100MHz
100
MHz