BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
http://onsemi.com
Features
• DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Collector−Base Voltage
VCBO
80
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
90
0.72
W
W/°C
TJ, Tstg
−55 to +150
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
°C
Operating and Storage Junction
Temperature Range
1
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
Max
1.39
3
Unit
qJC
2
TO−220AB
CASE 221A−09
STYLE 1
°C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BD8xxG
AY WW
BD8xx
=
A
Y
WW
G
=
=
=
=
Device Code
x = 09 or 10
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 6
1
Publication Order Number:
BD809/D
