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BF823
BC846 A-B TECHNICAL SPECIFICATION Silicon Planar Epitaxial NPN Transistor Dimensions SOT-23 1 BASE 2 EMITTER 3 CO LLECTO R Absolute Maximun Ratings (Ta=25oC) (at Ta = 25°C unless otherwise specified) Symbol - Ratings Unit Collector-Base Voltage (open emitter) V CBO max 80 V Collector-Emmiter Voltage (VBE = 0) V CES max 80 V Collector-Emmitor Voltage (open base) V CEO max 65 V Emitter Base Voltage V EBO - 6 V Collector current (d.c.) IC max 100 mA Collector current - Peak ICM max 200 V Base Current - Peak IBM - 200 mA -IE M - 200 mA Ptot - 250 mW Tj Tstg - -55 to +150 °C max 150 °C - 500 K/W Emitter Current - Peak Total Power Dissapation Ta = 25 °C Storage Temperature Junction Temperature THERMAL RESISTANCE Junction to ambient Rth(j-a) Please visit our website: www.rectron.com
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