LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
BC856ALT1, BLT1
BC857ALT1, BLT1
BC858ALT1, BLT1
CLT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V CEO
–65
–45
–30
V
Collector–Base Voltage
V CBO
–80
–50
–30
V
Emitter–Base Voltage
V
–5.0
–5.0
–5.0
V
–100
–100
–100
mAdc
Collector Current — Continuous
EBO
IC
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
PD
R θJA
PD
R θJA
T J , T stg
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage
BC856 Series
(IC = –10 µA, VEB = 0)
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(IC = – 10 µA)
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage
BC856 Series
(IE = – 1.0 µA)
BC857 Series,
BC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
V
(BR)CEO
V (BR)CES
V
(BR)CBO
V (BR)EBO
I CBO
v
v
v
v
nA
µA
1.FR–5=1.0 x 0.75 x 0.062in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M5–1/5
