BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
2
EMITTER
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
−65
−45
−30
V
Collector-Base Voltage
VCBO
−80
−50
−30
V
Emitter−Base Voltage
VEBO
−5.0
V
2
IC
−100
mAdc
SOT−23 (TO−236AB)
CASE 318
STYLE 6
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
556
°C/W
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Collector Current − Continuous
3
1
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
PD
300
2.4
417
°C/W
TJ, Tstg
−55 to +150
°C
xx M G
G
1
mW
mW/°C
RqJA
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
xx
M
G
= Device Code
xx = (Refer to page 5)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 10
1
Publication Order Number:
BC856ALT1/D
