MOTOROLA
Order this document
by MMBT2369LT1/D
SEMICONDUCTOR TECHNICAL DATA
Switching Transistors
MMBT2369LT1
MMBT2369ALT1*
COLLECTOR
3
NPN Silicon
1
BASE
*Motorola Preferred Device
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Emitter Voltage
VCES
40
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
4.5
Vdc
IC
200
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
3
°C
Collector Current — Continuous
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
15
—
—
40
—
—
40
—
—
4.5
—
—
—
—
—
—
0.4
30
—
—
Unit
0.4
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector – Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
Vdc
Vdc
Vdc
Vdc
µAdc
ICBO
µAdc
ICES
MMBT2369A
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
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