SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4306G
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low RDS(ON) = .33Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
12
11
7V
ID - Drain Current (Amps)
10
9
8
7
6
5
6V
5V
4
3
2
1
3.5V
0
3V
4V
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
TYPICAL CHARACTERISTICS
VGS=
20V 12V 10V 9V 8V
VGS=3V
3.5V
ZVN4306G
5V 6V
10
D
S
PARTMARKING DETAIL 1.0
ZVN4306
D
G
8V
10V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
0.1
0.1
1
100
10
ID-Drain Current (Amps)
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb=25°C
VGS=10V
ID=3A
2.2
gfs-Transconductance (S)
Normalised RDS(on) and VGS(th)
5
2.4
n)
(o
DS
2.0
eR
nc
1.8
1.6
eR
rc
ou
-S
ain
Dr
1.4
1.2
a
ist
es
VGS=VDS
ID=1mA
1.0
0.8
0.6
-50 -25
Gate Threshold Voltage VGS(TH)
0 25 50 75 100 125 150 175 200 225
4
VDS=10V
2
1
0
2
8
10
12
14
400
300
Ciss
100
Coss
Crss
0
0
10
20
30
40
50
60
70
18
20
VDD=
20V
40V
60V
16
200
16
Transconductance v drain current
80
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
6
4
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
500
VDS-Drain Source Voltage (Volts)
14
ID=3A
12
10
8
6
4
2
0
0 1
2
3
4
5
6
7
8
9
10 11 12
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 412
A
VGS
± 20
V
Ptot
Tj:Tstg
3
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
3
0
Normalised RDS(on) and VGS(th) v Temperature
A
15
Operating and Storage Temperature Range
2.6
2.1
IDM
Power Dissipation at Tamb=25°C
On-resistance v drain current
ID
Pulsed Drain Current
Gate Source Voltage
Saturation Characteristics
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL MIN.
60
BVDSS
VGS(th)
TYP.
On-State Drain
ID(on)
Current(1)
Static Drain-Source
RDS(on)
On-State Resistance (1)
ID=1mA, VDS= VGS
nA
VGS=± 20V, VDS=0V
VDS=60V, VGS=0V
VDS=48V, VGS=0V, T=125°C(2)
12
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
V
20
10
100
IGSS
IDSS
UNIT CONDITIONS.
V
ID=1mA, VGS=0V
3
1.3
MAX.
0.7
gfs
0.22
0.32
0.33
0.45
µA
µA
A
VDS=10V, VGS=10V
Ω
Ω
S
VDS=25V,ID=3A
VDS=25 V, VGS=0V, f=1MHz
Ciss
Coss
350
140
pF
pF
Crss
30
pF
td(on)
8
ns
tr
td(off)
25
30
ns
ns
tf
16
VGS=10V, ID=3A
VGS=5V, ID=1.5A
ns
VDD ≈25V, VGEN=10V, ID=3A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 411
