2N5400
2N5401
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5400 and
2N5401 are silicon PNP transistors designed for
high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
Thermal Resistance
JC
2N5400
130
120
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5400
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=100V
100
ICBO
VCB=100V, TA=100°C
100
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=3.0V
50
BVCBO
IC=100μA
130
BVCEO
IC=1.0mA
120
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.2
0.5
IC=50mA, IB=5.0mA
VCE(SAT)
VBE(SAT)
IC=10mA, IB=1.0mA
1.0
VBE(SAT)
IC=50mA, IB=5.0mA
1.0
hFE
VCE=5.0V, IC=1.0mA
30
hFE
VCE=5.0V, IC=10mA
40
240
hFE
VCE=5.0V, IC=50mA
40
fT
VCE=10V, IC=10mA, f=100MHz
100
400
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
30
200
NF
VCE=5.0V, IC=250μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
8.0
2N5401
160
150
5.0
600
625
1.5
-65 to +150
200
83.3
2N5401
MIN
MAX
50
50
50
160
150
5.0
0.2
0.5
1.0
1.0
50
60
240
50
100
300
6.0
40
200
-
8.0
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
dB
R1 (5-December 2014)
