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MMBT5401LT1
RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS SYMBOL VALUE UNITS - - mW Zener Current ( see Table "Characteristics" ) o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 Max. Operating Temperature Range TJ -55 to +150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R θJA - - 417 VF - - - UNITS o C/W Volts 2006-3
ONS
ON Semiconductor
U.S.A
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