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IRF6216TR
SMPS MOSFET PD - 95293 IRF6216PbF HEXFET® Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l -150V S S S G RDS(on) max ID 0.240W@VGS =-10V -2.2A 1 8 2 7 3 6 4 5 A D D D D SO-8 Top View Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units -2.2 -1.9 -19 2.5 0.02 ± 20 7.8 -55 to + 150 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units ––– ––– 20 50 °C/W Notes through are on page 8 www.irf.com 1 06/06/05
IR
International Rectifier
U.S.A
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