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IRFR9024TM
IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. -8.8 A, -60 V. RDS(ON) = 0.28 Ω @ VGS = -10 V Low gate charge. Fast switching speed. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. High performance technology for low RDS(ON). The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 6 ' * 6 72 0D[LPXP 5DWLQJV 6\PERO * ' R ÃÃÃÃÃÃÃU &2!$ 8 ÃyrÃur vrÃrq 5DWLQJV 8QLWV W '66 9 hvT prÃWyhtr 3DUDPHWHU % W W *66 B hrT prÃWyhtr ± ! W D' H hv Ã9 hvÃ8 rÃÃÃÃ8vÃÃÃÃÃÃÃÃÃÃÃÃÃÃà I rà '' 6 $% ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU & Ã2à R 8ÃÃÃÃÃÃÃà I rà H hv Ã9 hvÃ8 rÃÃÃÃQyrq "$ R Q' H hv ÃQ r Ã9vvhvÃ5 ÃÃU & Ã2Ã!$ 8ÃÃÃÃÃÃÃÃà I rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU !$ R 8à ÃÃÃÃÃÃÃÃÃÃI rà #! h "! R ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU $ Ã2Ã!$ 8à ÃÃÃÃÃÃÃÃÃÃI rà U -ÃU 67* i P r hvtÃhqÃT htrÃEpvÃUr r h rÃShtr " $ 7KHUPDO &KDUDFWHULVWLFV S θ-& Uur hyÃS rvhprÃEpvÃ8hrÃÃÃÃÃÃÃÃÃÃÃÃÃà I rà S θ-$ Uur hyÃS rvhprÃEpvÃ6 ivrÃÃÃÃÃÃÃÃà I rà h X $ °8 " ° 8X "' ° 8X 3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ 9r vprÃHh xvt 9r vpr DSAS(!# DSAS(!# SrryÃTvr 9vrÃhqÃhshp vtà p rÃiwrpÃÃpuhtrà vuà v Ãvsvphv ©1999 Fairchild Semiconductor Corporation Uhrà vqu "¶¶ % R hv !$ IRFR9024 Rev. A IRFR9024 August 1999
IR
International Rectifier
U.S.A
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