HOME＞在庫検索＞在庫情報
UN2119-TX
Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • UNR2110 • UNR2111 • UNR2112 • UNR2113 • UNR2114 • UNR2115 • UNR2116 • UNR2117 • UNR2118 • UNR2119 • UNR211D • UNR211E • UNR211F • UNR211H • UNR211L • UNR211M • UNR211N • UNR211T • UNR211V • UNR211Z 10˚ Marking Symbol (R1) (UN2110) 6L 47 kΩ (UN2111) 6A 10 kΩ (UN2112) 6B 22 kΩ (UN2113) 6C 47 kΩ (UN2114) 6D 10 kΩ (UN2115) 6E 10 kΩ (UN2116) 6F 4.7 kΩ (UN2117) 6H 22 kΩ (UN2118) 6I 0.51 kΩ (UN2119) 6K 1 kΩ (UN211D) 6M 47 kΩ (UN211E) 6N 47 kΩ (UN211F) 6O 4.7 kΩ (UN211H) 6P 2.2 kΩ (UN211L) 6Q 4.7 kΩ (UN211M) EI 2.2 kΩ (UN211N) EW 4.7 kΩ (UN211T) EY 22 kΩ (UN211V) FC 2.2 kΩ (UN211Z) FE 4.7 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00006CED 1
PANASONIC
パナソニック株式会社
日本
電子デバイス・産業用機器 受動部品、接続部品、センサ、変換部品、産業デバイス、プリント配線板/モジュール、素材・材料、半導体、記憶デバイス、電池・エネルギー機器、FA（実装、溶接、計測）、モータ・コンプレッサ
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
