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BZT03-43
BZT03C... Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Power dissipation Repetitive peak reverse power dissipation Non repetitive peak surge power dissipation Junction temperature Storage temperature range Test Conditions l=10mm, TL=25°C Tamb=25°C Type Symbol PV Unit W PV PZRM 1.3 10 W W PZSM 600 W Tj Tstg tp=100ms, Tj=25°C Value 3.25 175 –65...+175 °C °C Symbol RthJA RthJA Value 46 100 Unit K/W K/W Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=0.5A TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 Type Symbol VF Min Typ Max 1.2 Unit V 1 (6)
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