BZG05C...
Silicon Z–Diodes
Features
D
D
D
D
D
Glass passivated junction
High reliability
Voltage range 3.3V to 15V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
Applications
Voltage stabilization
94 9535
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
p
Non repetitive peak surge
power dissipation
Junction temperature
Storage temperature range
Test Conditions
RthJA<30K/W, Tamb=60°C
RthJA<100K/W, Tamb=25°C
tp=100ms sq.pulse, Tj=25°C
prior to surge
Type
Symbol
PV
PV
PZSM
Value
3
1.25
60
Unit
W
W
W
Tj
Tstg
150
–65...+150
°C
°C
Symbol
RthJL
RthJA
RthJA
RthJA
Value
30
150
125
100
Unit
K/W
K/W
K/W
K/W
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction lead
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al2O3), Fig. 1b
Characteristics
Tj = 25_C
Parameter
Forward voltage
Test Conditions
IF=0.2A
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
Type
Symbol
VF
Min
Typ
Max
1.2
Unit
V
1 (5)
