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BYV32EB200
BYV32EB-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic minimizes power consuming oscillations Low thermal resistance Surface-mountable package High reverse voltage surge capability Very low on-state loss 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VRRM repetitive peak reverse voltage IO(AV) average output current IRRM VESD Conditions Min Typ Max Unit - - 200 V - - 20 A repetitive peak reverse current tp = 2 µs; δ = 0.001 - - 0.2 A electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - - 8 kV IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 - 20 25 ns IR = 1 A; IF = 0.5 A; Tj = 25 °C; measured at reverse current = 0.25 A; step recovery; see Figure 6 - 10 20 ns IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 Dynamic characteristics trr reverse recovery time Static characteristics VF forward voltage
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