SS32 thru SS36
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-214AB (SMC)
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
TJ max.
125 °C, 150 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
SS34
SS35
SS36
S2
Device marking code
S3
S4
S5
S6
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at TL (Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Voltage rate of change (rated VR)
dv/dt
Operating junction temperature range
Storage temperature range
Document Number: 88751
Revision: 23-Jan-08
TJ
TSTG
10 000
- 55 to + 125
- 55 to + 150
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
V/µs
- 55 to + 150
°C
°C
www.vishay.com
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