Philips Semiconductors
Product specification
Breakover diodes
GENERAL DESCRIPTION
BR211 series
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
applications
include
transient
overvoltage
protection
in
telecommunications equipment.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V(BO)
IH
ITSM
BR211-140 to 280
Breakover voltage
Holding current
Non-repetitive peak current
140
150
-
280
40
V
mA
A
OUTLINE - SOD84
SYMBOL
BR211-XXX
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VD
Continuous voltage
ITSM1
Non repetitive peak current
ITSM2
Non repetitive on-state current
I2t
dIT/dt
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
Ptot
PTM
Tstg
Ta
Tvj
August 1996
CONDITIONS
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
off-state
on-state
1
MAX.
UNIT
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
tp = 10 µs
MIN.
V
-
75% of
V(BO)typ
40
-
15
A
-
1.1
50
A2s
A/µs
-65
-
1.2
50
150
70
150
W
W
˚C
˚C
˚C
A
Rev 1.200
