Enabling Energy Efficient Solutions
Product Overview
Created on: 10/26/2011
MBRS1100: 100 V, 1.0 A Schottky Rectifier
For complete documentation, see the data sheet
Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky
Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally
suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
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Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage - 100 Volts
150°C Operating Junction Temperature
Guardring for Stress Protection
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Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Part Electrical Specifications
Product
Compliance
Status
VRRM Min
(V)
VF Max (V)
IRM Max
(uA)
IO(rec) Max
(A)
IFSM Max
(A)
MBRS1100T3G
Pb-free
Active
100
0.75
500
1
50
Halide free
Package Availability
Type
SMB-2
Pb-free
Standard
For more information please contact your local sales support at www.onsemi.com
trr Max (ns)
Cj Max (pF)
Package
Type
SMB-2
