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IR2110
Data Sheet No. PD60147 rev.U IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Product Summary VOFFSET (IR2110) (IR2113) 500V max. 600V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. Packages Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan16-Lead SOIC nels. Proprietary HVIC and latch immune CMOS technologies enable 14-Lead PDIP IR2110S/IR2113S ruggedized monolithic construction. Logic inputs are compatible with IR2110/IR2113 standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. Typical Connection up to 500V or 600V HO VDD VDD VB HIN HIN VS SD SD LIN LIN VCC V SS VSS COM VCC TO LOAD LO (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1
INFINEON
Infineon Technologies
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