1N4151
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
DO-204AH (DO-35 Glass)
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case styles
including the SOD-123 case with the type
designation 1N4151W, and the MiniMELF case with
the type designation LL4151.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm tape), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Limit
Unit
VR
50
V
Peak Reverse Voltage
VRM
75
V
Average Rectified Current
Half Wave Rectification with Resistive Load
at Tamb = 25°C and f ≥ 50Hz(1)
IF(AV)
150
mA
Surge Forward Current at t < 1s and Tj = 25°C
IFSM
500
mA
Ptot
500
mW
RθJA
350
°C/W
Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
–65 to +175
°C
Reverse Voltage
(1)
Power Dissipation at Tamb = 25°C
(1)
Thermal Resistance Junction to Ambient Air
Electrical Characteristics
(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)R
IR = 5µA (pulsed)
75
—
—
V
Forward Voltage
VF
IF = 50mA
—
—
1.0
V
Leakage Current
IR
VR = 50V
VR = 50V, Tj = 150°C
—
—
—
—
50
50
nA
µA
Ctot
VF = VR = 0V
—
—
2
pF
—
—
4
trr
IF = 10mA to IR = 10mA
to IR = 1mA
IF = 10mA to IR = 1mA
VR = 6V, RL = 100Ω
—
—
2
f = 100MHz, VRF = 2V
0.45
—
—
Reverse Breakdown Voltage
Capacitance
Reverse Recovery Time
Rectification Efficiency
ην
ns
—
Note: (1) Valid provided that at a distance of 8 mm from case are kept at ambient temperature.
Document Number 88106
13-May-02
www.vishay.com
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