HITANO ENTERPRISE CORP.
1N5400 THRU 1N5408
TECHNICAL SPECIFICATIONS OF SILICON
VOLTAGE RANGE – 50 to 1000 Volts
RECTIFIER
CURRENT – 3.0 Amperes
FEATURES
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
*Case: Molded plastic
*Epoxy: UL 94V -0 rate flame retardant
*Lead: MIL-STD-202E, Method 208 guaranteed.
*Polarity: Color band denotes cathode end
*Mounting position: Any
*Weight: 1.18 grams
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise
specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Dimensions in inches and (millimeters)
SYMBOL
1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Rectified
Current .375*(9.5mm) lead length at TL
=105℃
Peak Forward Surge Current, 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC Method)
Maximum Instantaneous Forward Voltage
at 3.0ADC
Maximum DC Reverse
Current at Rated DC Blocking
Voltage
IO
3.0
Amps
IFSM
200
Amps
VF
1.1
Volts
@ TA=25℃
5.0
μAmps
@ TA=100℃
IR
Maximum Full Load Reverse Current
Average, Full Cycle .375*(9.5mm) lead
length at TL=75℃
Typical Junction Capacitance (Note)
Typical Thermal Resistance
500
30
μSec
CJ
40
pF
RΘJA
30
℃/W
NOTES: 1. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
