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SMBJ50A-7101

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仕様・特性

SMBJ5.0A thru SMBJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability DO-214AA (SMB J-Bend) • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS VBR (bi-directional) 6.4 V to 231 V VBR (uni-directional) 6.4 V to 231 V VWM 5.0 V to 188 V PPPM 600 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AA (SMBJ) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) PPPM (1)(2) 600 W Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 100 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 06-Feb-14 Document Number: 89284 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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