Crystal oscillator
SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636 series
• A small SMD that enables high-density mounting.
• A general-purpose device with builtin heat-resisting cylindrical
AT-cut crystal and allowing almost the same temperature
condition for soldering as SMD IC.
• Low current consumption.
• Provided with output enable function.
• 3.3 V operation, stand-by function available.
Specifications (characteristics)
Item
f0
Output frequency range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Power source
voltage
Temperature
range
VDD-GND
VDD
TSTG
TOPR
Soldering condition
TSOL
Frequency stability
Current consumption
∆f/f0
lop
C-MOS level
TTL level
Duty
tw/t
VOH
(IOH)
Output voltage
VOL
(IOL)
C-MOS
CL
TTL
Output load condition
(fan out)
N
VIH
VIL
IOE
Output enable/disable input voltage
Output disable current
C-MOS level
TTL level
C-MOS level
TTL level
Output rise time
Output fall time
tTLH
tTHL
Oscillation start up time
Aging
2.21675 MHz to
41.0000 MHz
-0.5 V to +7.0 V
41.0001 MHz to 70.0000 MHz
SG-636SCE/PCE
S.R.
10 ms Max.
±5 x 10-6 /year Max.
4 ms Max.
Remarks
2.21675 MHz to
41.0000 MHz
-0.5 V to +7.0 V
-0.3 V to +7.0 V
5.0 V ±0.5 V
3.3 V ±0.3 V
-55 °C to +100 °C
-20 °C to +70 °C
Twice at under +260 °C within 10 s
or under +230 °C within 3 min.
C: ±100 x 10-6
17 mA Max.
35 mA Max.
9 mA Max.
—
40 % to 60 %
40 % to 60 %
45 % to 55 %
—
45 % to 55 %
VDD -0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
-400 µA
-8 mA
-4 mA
0.4 V Max.
8 mA
4 mA
16 mA
20 pF Max.( ≤ 55 MHz)
15 pF
50 pF Max.
30 pF Max.
15 pF Max.( > 55 MHz)
5 LSTTL Max.
5 TTL Max.
—
10 TTL Max.
2.0 V Min.
3.5 V Min.
0.8 VDD Min.
2.0 V Min.
0.8 V Max.
1.5 Max.
0.2 VDD Max.
0.8 V Max.
20 mA Max.
28 mA Max.
5 mA Max.
10 mA Max.
—
5 ns Max.
7 ns Max.
5 ns Max.
—
—
5 ns Max.
7 ns Max.
5 ns Max.
—
tosc
fa
Shock resistance
SG-636PTJ
SG-636PH
Specifications
SG-636PTF
Symbol
4 ms Max.
±20 x 10-6 Max.
Stored as bare product after unpacking
No load condition
C-MOS load: 1/2 VDD leve l
TTL load: 1.4 V level
_
CL<15 pF
IIH=1 µA Max.(OE=VDD)PTF.PTJ.PH
IIL=-100 µA Min. (OE=GND) PTF.PH -500 µA Min. (OE=GND) PTJ
OE=GND, ST=GND 2 µA Max.(SCE)
C-MOS load:
TTL load:
C-MOS load:
TTL load:
20 %→80 % VDD
0.4 V→2.4 V
80 %→20 % VDD
2.4 V→0.4 V
Time at 4.5 V to be O s
Ta=+25 °C,VDD=5 V,first year
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions
Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is required.
• Metal may be exposed on the top of this product. This won't affect any quality, reliability or electrical spec.
(Unit: mm)
NO.
10.5 Max.
5.0
2.4
E 18.4320C
5.8 Max.
#3
1
2
3
4
2.7 Max.
#4
Pin terminal
SG-636SCE SG-636P∗∗
ST
OE
GND
GND
OUT
OUT
VDD
VDD
PTF9352A
3.8
1.3
2.1
0.5
5.08
3.6
(1.0)
35
1.3
2.5
#2
#1
Recommended soldering pattern
2.1
External dimensions
(1.0)
(Unit: mm)
