Data Sheet
Switching Diode
DAP222
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
1.6±0.2
0.3±0.1
0.05
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
0.15±0.05
0.7
0.7
(1)
(2)
0.6
0.6
EMD3
0.55±0.1
0.5
0.5
1.0±0.1
Construction
Silicon epitaxial planar
0～0.1
0.1Min
0.2±0.1
-0.05
1.6±0.2
0.8±0.1
(3)
1.3
Applications
Ultra high speed switching
0.7±0.1
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications(Unit : mm)
φ1.55±0.1
φ1.5 0.1
0
0
2.0±0.05
0.3±0.1
8.0±0.2
0～0.1
1.8±0.1
5.5±0.2
1.8±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (single)
Average rectified forward voltage (single)
Surge current （t=1us）
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
IFM
Io
Isurge
Pd
Tj
Tstg
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
150
150
55 to 150
Conditions
Symbol
VF
Min.
Typ.
Max.
Unit
Forward voltage
-
-
1.2
V
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Ct
-
-
3.5
pF
VR=6V , f=1MHz
Reverse recovery time
trr
-
-
4
ns
VR=6V , IF=5mA , RL=50Ω
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1/2
IF=100mA
2011.04 - Rev.B
