SM25GZ51, SM25JZ51
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR
ILICON PLANAR TYPE
SM25GZ51, SM25JZ51
AC POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage: VDRM = 400V, 600V
R.M.S On−State Current: IT (RMS) = 25A
High Commutating (dv / dt): (dv / dt) c = 10V / μs
Isolation Voltage: VIsol = 1500V AC
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SYMBOL
SM25GZ51
SM25JZ51
VDRM
R.M.S On−State Current
(Full Sine Waveform Tc = 73°C)
IT (RMS)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
ITSM
2
2
I t Limit Value
RATING
400
600
25
230 (50Hz)
253 (60Hz)
UNIT
V
A
A
2
I t
260
A s
di / dt
50
A / μs
PGM
5
W
TOSHIBA
PG (AV)
0.5
W
Weight: 5.9 g (typ.)
Peak Gate Voltage
VGM
10
V
Peak Gate Current
IGM
2
A
Tj
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Isolation Voltage (AC, t = 1 min.)
VIsol
1500
V
Critical Rate of Rise
of On−State Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
JEDEC
―
JEITA
―
13-16A1A
Note 1: di / dt Test Condition
VDRM = 0.5 × Rated
ITM ≤ 40A
tgw ≥ 10μs
tgr ≤ 250ns
igp = IGT × 2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-10-30