Si7802DN
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.435 at VGS = 10 V
1.95
0.445 at VGS = 6 V
250
ID (A)
1.9
• Halogen-free According to IEC 61249-2-21
Available
• PWM-Optimized TrenchFET® Power MOSFET
• Avalanche Tested
• 100 % Rg Tested
APPLICATIONS
PowerPAK® 1212-8
• Primary Side Switch
• Small DC/DC Circuits
• Single-Ended Primary Switching Circuits
S
3.30 mm
3.30 mm
1
S
2
D
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
Ordering Information: Si7802DN-T1-E3 (Lead (Pb)-free)
Si7802DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 70 °C
ID
a
V
1.95
1.24
1.56
0.99
IDM
Pulsed Drain Current
Unit
8
Continuous Source Current (Diode Conduction)
IS
Single Avalanche Current
IAS
2.5
EAS
A
0.3
Single Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 70 °C
PD
3.2
mJ
3.8
1.5
2.0
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
1.3
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
26
33
65
81
1.9
Unit
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73133
S-83050-Rev. D, 29-Dec-08
www.vishay.com
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