Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
Dimensions (Unit : mm)
(2)
(3)
0.4
(1)
2SC4061K
0.95 0.95
1.9
2.9
Features
1) High breakdown voltage. (BVCEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at VCB=30V)
3) Ideal for chroma circuit.
1.6
2.8
V
V
VEBO
IC
5
100
0.2
V
mA
PC
0.3
W
Collector power
dissipation
2SC4061K
2SC3415S
2SC4015
1 ∗
150
Junction temperature
Tj
Storage temperature
Tstg
2SC3415S
°C
−55 to +150
0.3Min.
ROHM : SMT3
EIAJ : SC-59
1.1
Each lead has same dimensions
4
2
3Min.
Emitter-base voltage
Collector current
0~0.1
Unit
300
300
(1) Emitter
(2) Base
(3) Collector
3
Limits
VCBO
VCEO
Parameter
(15Min.)
Symbol
Collector-base voltage
Collector-emitter voltage
0.8
0.15
Absolute maximum ratings (Ta=25C)
°C
0.45
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
2.5
(1) Emitter
(2) Collector
(3) Base
0.5 0.45
5
ROHM : SPT
EIAJ : SC-72
2SC4015
2.5
6.8
∗ Denotes hFE
0.65Max.
0.5
4.4
∗
2SC4015
ATV
NP
−
TV2
2500
0.9
2SC4061K 2SC3415S
SPT
SMT3
NP
NP
−
AN
TP
T146
5000
3000
Taping specifications
1.0
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
(1) (2) (3)
14.5
Packaging specifications and hFE
(1) (2) (3)
ROHM : ATV
2.54 2.54
1.05
0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Parameter
BVCBO
BVCEO
−
−
−
V
V
V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
ICBO
−
0.5
μA
VCB=200V
IEBO
−
−
0.5
2
μA
V
VEB=4V
VCE(sat)
DC current transfer ratio
hFE
56
−
−
−
−
−
−
−
IC=50μA
IC=100μA
BVEBO
300
300
5
Gain bandwidth product
Collector output capacitance
fT
50
100
−
MHz
Cob
−
3
120
−
−
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c
○ 2009 ROHM Co., Ltd. All rights reserved.
pF
1/3
Conditions
IE=50μA
IC/IB=50mA/5mA
VCE/IC=10V/10mA
VCE=30V, IE=−10mA, f=30MHz
VCB=30V, IE=0A, f=1MHz
2009.12 - Rev.B
