1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
Features
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Outline 15
Maximum Ratings
0.41 (.016)�
0.36 (.014)
25.4 (1.00)�
MIN.
1.93 (.076)�
1.73 (.068)
CATHODE
4.32 (.170)�
3.81 (.150)
25.4 (1.00)�
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11...... -65°C to +200°C
5082-2835...................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11......................250 mW
5082-2835......................................................................150 mW
Peak Inverse Voltage................................................................. VBR
