MAGX-000912-500L00
MAGX-000912-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
Features
Rev. V5
MAGX-000912-500L00
GaN on SiC Depletion-Mode Transistor
Technology
Internally matched
Common-Source configuration
Broadband Class AB operation
RoHS* Compliant and 260°C Reflow Compatible
+50V Typical Operation
MTTF = 600 years (TJ < 200°C)
Applications
Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
Military radar for IFF and Data Links.
Description
MAGX-000912-500L0S
The MAGX-000912-500L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme
mismatch
load conditions compared with older semiconductor
technologies.
Ordering Information
Part Number
Description
MAGX-000912-500L00
Flanged
MAGX-000912-500L0S
Flangeless
MAGX-A00912-500L00
960 - 1215 MHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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