2SJ74
TOSHIBA Field Effect Transistor
Silicon P Channel Junction Type
2SJ74
Low Noise Audio Amplifier Applications
Unit: mm
•
Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
•
High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = −10 V, VGS = 0, IDSS = −3 mA)
•
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = −10 V, ID = −1 mA, f = 1 kHz)
•
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
•
Complimentary to 2SK170
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
25
V
Gate current
IG
−10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
JEDEC
TO-92
Tstg
−55~125
°C
JEITA
SC-43
Gate-drain voltage
Storage temperature range
Note:
TOSHIBA
2-5F1D
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 25 V, VDS = 0
⎯
⎯
1.0
nA
V (BR) GDS
VDS = 0, IG = 100 μA
25
⎯
⎯
V
VDS = −10 V, VGS = 0
−2.6
⎯
−20
mA
VDS = −10 V, ID = −0.1 μA
0.15
⎯
2.0
V
IDSS
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = −10 V, VGS = 0, f = 1 kHz
8
22
⎯
mS
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
105
⎯
pF
Reverse transfer capacitance
Crss
VDG = −10 V, ID = 0, f = 1 MHz
⎯
32
⎯
pF
NF (1)
VDS = −10 V, ID = −1 mA, RG = 1 kΩ,
f = 10 Hz
⎯
1.0
10
NG (2)
VDS = −10 V, ID = −1 mA, RG = 1 kΩ,
f = 1 kHz
⎯
0.5
2
Noise figure
dB
Note: IDSS classification GR: −2.6~−6.5 mA, BL: −6.0~−12 mA, V: −10~−20 mA
1
2007-11-01