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部品型式

PIC12C508A-04SM

製品説明
仕様・特性

PIC12C5XX 8-Pin, 8-Bit CMOS Microcontrollers Devices included in this Data Sheet: Peripheral Features: • PIC12C508 • PIC12C508A • PIC12C509 • PIC12C509A • PIC12CR509A • PIC12CE518 • PIC12CE519 PIC12C508 512 x 12 25 • 8-bit real time clock/counter (TMR0) with 8-bit programmable prescaler • Power-On Reset (POR) • Device Reset Timer (DRT) • Watchdog Timer (WDT) with its own on-chip RC oscillator for reliable operation • Programmable code-protection • 1,000,000 erase/write cycle EEPROM data memory • EEPROM data retention > 40 years • Power saving SLEEP mode • Wake-up from SLEEP on pin change • Internal weak pull-ups on I/O pins • Internal pull-up on MCLR pin • Selectable oscillator options: - INTRC: Internal 4 MHz RC oscillator - EXTRC: External low-cost RC oscillator - XT: Standard crystal/resonator - LP: Power saving, low frequency crystal PIC12C508A 512 x 12 25 CMOS Technology: PIC12C509 1024 x 12 41 PIC12C509A 1024 x 12 41 PIC12CE518 512 x 12 25 16 PIC12CE519 1024 x 12 41 16 Note: Throughout this data sheet PIC12C5XX refers to the PIC12C508, PIC12C509, PIC12C508A, PIC12C509A, PIC12CR509A, PIC12CE518 and PIC12CE519. PIC12CE5XX refers to PIC12CE518 and PIC12CE519. High-Performance RISC CPU: • Only 33 single word instructions to learn • All instructions are single cycle (1 µs) except for program branches which are two-cycle • Operating speed: DC - 4 MHz clock input DC - 1 µs instruction cycle Memory Device PIC12CR509A EPROM Program ROM Program 1024 x 12 • • • • • RAM Data EEPROM Data 41 12-bit wide instructions 8-bit wide data path Seven special function hardware registers Two-level deep hardware stack Direct, indirect and relative addressing modes for data and instructions • Internal 4 MHz RC oscillator with programmable calibration • In-circuit serial programming © 1999 Microchip Technology Inc. • Low power, high speed CMOS EPROM/ROM technology • Fully static design • Wide operating voltage range • Wide temperature range: - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C - Extended: -40°C to +125°C • Low power consumption - < 2 mA @ 5V, 4 MHz - 15 µA typical @ 3V, 32 KHz - < 1 µA typical standby current DS40139E-page 1

ブランド

SAMSUNG

会社名

Samsung Electronics Co., Ltd

本社国名

韓国

事業概要

DRAM製品、モバイル機器の製造販売メーカー

供給状況

 
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