Type
BSC160N10NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
VDS
16
mW
ID
• N-channel, normal level
V
RDS(on),max
• Optimized for dc-dc conversion
100
42
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TDSON-8
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC160N10NS3 G
PG-TDSON-8
160N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
42
T C=100 °C
Unit
27
T A=25 °C,
R thJA=50 K/W 2)
A
8.8
Pulsed drain current3)
I D,pulse
T C=25 °C
168
Avalanche energy, single pulse
E AS
I D=33 A, R GS=25 W
50
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
60
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.4
55/150/56
page 1
2009-10-30
