FDS6930B
Dual N-Channel Logic Level PowerTrench® MOSFET
Features
General Description
■ 5.5 A, 30 V.
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
RDS(ON) = 38 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
■
■
■
■
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
D2
5
4
6
D2
3
7
2
8
1
D1
D1
SO-8
Pin 1
S1
G1
S2
G2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
5.5
A
– Continuous
(Note 1a)
– Pulsed
20
Power Dissipation for Dual Operation
(Note 1)
2
Power Dissipation for Single Operation
PD
(Note 1a)
1.6
(Note 1b)
TJ, TSTG
1
(Note 1c)
W
0.9
–55 to 150
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6930B
FDS6930B
13"
12mm
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6930B Rev. A2
1
www.fairchildsemi.com
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET
March 2010
