2SK210
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
•
High power gain: GPS = 24dB (typ.) (f = 100 MHz)
•
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
•
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDO
−18
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1C
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Symbol
IGSS
V (BR) GDO
IDSS
(Note)
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
−10
nA
−18
⎯
⎯
V
VGS = 0 V, VDS = 10 V
3
⎯
24
mA
VDS = 10 V, ID = 1 μA
−1.2
−3
⎯
V
VGS = −1.0 V, VDS = 0 V
IG = −100 μA
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VGS = 0 V, VDS = 10 V, f = 1 kHz
⎯
7
⎯
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
3.5
⎯
pF
Reverse transfer capacitance
Crss
VGD = −10 V, f = 1 MHz
⎯
⎯
0.65
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure 1)
⎯
24
⎯
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure 1)
⎯
1.8
3.5
dB
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
1
2007-11-01
