2SK192A
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
·
High power gain: GPS = 24dB (typ.) (f = 100 MHz)
·
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
·
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDO
-18
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Tstg
-55~125
°C
Gate-drain voltage
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
Weight: 0.13 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Symbol
IGSS
V (BR) GDO
IDSS
(Note)
2-4E1D
Test Condition
Min
Typ.
Max
Unit
¾
¾
-10
nA
-18
¾
¾
V
VGS = 0, VDS = 10 V
3
¾
24
mA
VDS = 10 V, ID = 1 mA
-1.2
-3
¾
V
VGS = -1.0 V, VDS = 0
IG = -100 mA
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
ïYfsï
VGS = 0, VDS = 10 V, f = 1 kHz
¾
7
¾
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
¾
3.5
¾
pF
Reverse transfer capacitance
Crss
VGD = -10 V, f = 1 MHz
¾
¾
0.65
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure 1)
¾
24
¾
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure 1)
¾
1.8
3.5
dB
Note: IDSS classification
Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
1
2003-04-04
