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TMS4464-12NL
Si4464DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 200 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized for Low Qg and Low Rg • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free) Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Single Avalanch Current L = 0.1 mH Single Avalanch Energy Conduction)a 2.2 1.7 1.3 Maximum Power Dissipationa TA = 70 °C 8 IAS 0.45 PD mJ 2.1 1.2 2.5 1.5 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range A 3 EAS IS TA = 25 °C V 1.7 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 37 50 68 85 17 Unit 21 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72051 S09-0705-Rev. C, 27-Apr-09 www.vishay.com 1
TI
Texas Instruments Incorporated
U.S.A
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