2SK3581-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Symbol
Ratings
Unit
V
V DS
500
A
ID
±14
A
ID(puls]
±56
V
VGS
±30
A
IAR *2
14
mJ
EAS *1
242
kV/µs
dVDS/dt *4
20
dV/dt *3
5
kV/µs
PD Ta=25°C
1.67
W
Tc=25°C
115
+150
Operating and storage
Tch
°C
-55 to +150
temperature range
Tstg
°C
*1 L=2.27mH, Vcc=50V *2 Tch <150°C *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C
=
=
=
=
*4 VDS < 500V
=
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Min.
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=7A VGS=10V
Typ.
500
3.0
5.0
25
250
100
0.46
Tch=25°C
Tch=125°C
ID=7A VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=300V ID=7A
VGS=10V
7
RGS=10 Ω
V CC =250V
ID=14A
VGS=10V
L=2.27mH Tch=25°C
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs Tch=25°C
Max.
10
0.35
14
1600
2400
160
240
7
10.5
18
27
16
24
35
50
8
15
33
50
12.5
19
10.5
16
14
1.00
0.65
6.0
1.50
Units
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.09
75.0
Units
°C/W
°C/W
1
