2SD1223
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1223
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
•
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
•
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
•
Complementary to 2SB908.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
4
A
Base current
IB
0.4
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
PC
1.0
15
JEDEC
W
Tj
Storage temperature range
150
°C
Tstg
−55 to 150
°C
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4.5 kΩ
≈ 300 Ω
EMITTER
Start of commercial production
1981-09
1
2013-11-01
