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部品型式

DF3A56FE

製品説明
仕様・特性

DF3A5.6FE TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6FE Product for Use Only as Protection against Electrostatic Discharge (ESD). Unit: mm * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 100 mW Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ⎯ JEITA ⎯ TOSHIBA 1-2SA1A Weight: 0.0023 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5mA 5.3 5.6 6.0 V Dynamic impedance ZZ IZ = 5mA ― ― 40 Ω Reverse current IR VR =2.5V ― ― 1.0 μA Terminal capacitance (between Cathode and Anode) CT VR = 0, f = 1MHz ― 65 ― pF Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ± 30kV Criterion: No damage to device elements 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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