DF3A5.6FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A5.6FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
⎯
JEITA
⎯
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5mA
5.3
5.6
6.0
V
Dynamic impedance
ZZ
IZ = 5mA
―
―
40
Ω
Reverse current
IR
VR =2.5V
―
―
1.0
μA
Terminal capacitance
(between Cathode and Anode)
CT
VR = 0, f = 1MHz
―
65
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30kV
Criterion: No damage to device elements
1
2007-11-01