P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector--Emitter Voltage
VCEO
--60
Vdc
Collector--Base Voltage
VCBO
--60
Vdc
Emitter--Base Voltage
VEBO
--5.0
Vdc
Collector Current -- Continuous
IC
--600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
--55 to
+150
°C
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO-92
CASE 29
STYLE 17
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
200
°C/W
Thermal Resistance, Junction to Case
RθJC
83.3
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
°C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
907A
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
P2N2907AG
TO--92
(Pb--Free)
5000 Units / Bulk
P2N2907ARL1G
TO--92
(Pb--Free)
2000 / Tape & Reel
Device
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 - Rev. 6
-
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D
