TIC256 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
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High Current Triacs
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20 A RMS
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Glass Passivated Wafer
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400 V to 800 V Off-State Voltage
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150 A Peak Current
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JULY 1991 - REVISED MARCH 1997
Max IGT of 50 mA (Quadrants 1 - 3)
TO-220 PACKAGE
(TOP VIEW)
MT1
1
MT2
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC256D
TIC256M
Repetitive peak off-state voltage (see Note 1)
TIC256S
UNIT
400
600
VDRM
V
700
TIC256N
800
IT(RMS)
20
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
150
A
Peak gate current
IGM
±1
A
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2)
Lead temperature 1.6 mm from case for 10 seconds
A
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
MIN
TEST CONDITIONS
Repetitive peak
VD = Rated VDRM
off-state current
IG = 0
TYP
UNIT
±2
TC = 110°C
MAX
mA
Vsupply = +12 V†
IH
50
tp(g) > 20 µs
-15
-50
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-16
-50
RL = 10 Ω
tp(g) > 20 µs
28
RL = 10 Ω
tp(g) > 20 µs
0.7
2
Peak gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.7
-2
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
Vsupply = -12 V†
VTM
7
RL = 10 Ω
Vsupply = +12 V†
VGTM
tp(g) > 20 µs
Vsupply = +12 V†
Vsupply = -12 V†
IGTM
RL = 10 Ω
Peak gate trigger
RL = 10 Ω
tp(g) > 20 µs
0.8
2
ITM = ±28.2 A
IG = 50 mA
(see Note 4)
±1.4
±1.7
Vsupply = +12 V†
IG = 0
Init’ ITM = 100 mA
6
40
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-13
-40
Peak on-state voltage
Holding current
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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