DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
PACKAGE DIMENSIONS
in millimeters
• Small Package
• High Gain Bandwidth Product (fT = 12 GHz TYP.)
2.1 ± 0.2
PART
NUMBER
QUANTITY
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
2
PACKING STYLE
1
0.3 +0.1
–0.05
(LEADS 2, 3, 4)
3
(1.3)
ORDERING INFORMATION
T83
2.0 ± 0.2
(1.25)
0.60 0.65
• Low Voltage Operation
1.25 ± 0.1
0.3 +0.1
–0.05
0.3 +0.1
–0.05
• Low Noise, High Gain
4
0.3
0.9 ± 0.1
0.4 +0.1
–0.05
0.15 +0.1
–0.05
0 to 0.1
* Please contact with responsible NEC person, if you require evaluation
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Ti
150
˚C
Storage Temperature
Tstg
–65 to + 150
˚C
Caution: Electrostatic Sensitive Device
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
©
1993