MX29LV640MT/B
FEATURES
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
FLASH MEMORY
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 8,388,608 x 8 / 4,194,304 x 16 switchable
• Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected
- Once this sector is protected, it is prohibited to program or erase within the sector again
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power supply Flash
- Active write current: 50mA(typ.)
- Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-years data retention
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Program Suspend Resume
- Suspends programming operation to read data from
other sectors
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read/program
other sectors
• Status Reply
- Data# polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
- ACC (high voltage) accelerates programming time
for higher throughput during system
PERFORMANCE
• High Performance
- Fast access time: 90ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer: reduces programming
time for multiple-word/byte updates
• Low Power Consumption
- Active read current: 18mA(typ.)
PACKAGE
• 48-pin TSOP
• 63-ball CSP
• All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
The MX29LV640MT/B is a 64-mega bit Flash memory
organized as 8M bytes of 8 bits or 4M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640MT/B is packaged in 48-pin TSOP, 63ball CSP. It is designed to be reprogrammed and erased
in system or in standard EPROM programmers.
The standard MX29LV640MT/B offers access time as
fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV640MT/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
P/N:PM1079
REV. 1.2, FEB. 27, 2006
1
