MX29LV640T/B
FEATURES
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
FLASH MEMORY
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 8,388,608 x 8 / 4,194,304 x 16 switchable
• Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to program or erase within the sector again.
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power supply Flash
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP Pin
- Write protect (WP) function allows protection of two
outermost boot sectors, regardless of sector protect
status
PACKAGE
• 48-pin TSOP
• 63-ball CSP
• 64-ball Easy BGA
PERFORMANCE
• High Performance
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
• Minimum 100,000 erase/program cycle
• 20-year data retention
GENERAL DESCRIPTION
The standard MX29LV640T/B offers access time as fast
as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX29LV640T/B has separate chip enable (CE) and
output enable (OE) controls.
The MX29LV640T/B is a 64-mega bit Flash memory organized as 8M bytes of 8 bits or 4M bytes of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640T/B is packaged in 48-pin TSOP, 63ball CSP and 64-ball Easy BGA. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
P/N:PM0920
REV. 1.2, NOV. 05, 2003
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