MX29LV320AT/B
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 10 years data retention
GENERAL FEATURES
• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector Structure
- 8K-Byte x 8 and 64K-Byte x 63
• Extra 64K-Byte sector for security
- Features factory locked and identifiable, and customer lockable
• Twenty-Four Sector Groups
- Provides sector group protect function to prevent program or erase operation in the protected sector group
- Provides chip unprotect function to allow code changing
- Provides temporary sector group unprotect function
for code changing in previously protected sector groups
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
• 2nd generation of 3V/32M Flash product
- Fully compatible with MX29LV320T/B device
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal state
machine to read mode
• WP/ACC input pin
- Provides accelerated program capability
PERFORMANCE
• High Performance
- Fast access time: 70/90ns
- Fast program time: 7us/word typical utilizing accelerate function
- Fast erase time: 0.9s/sector, 35s/chip (typical)
PACKAGE
• 48-Pin TSOP
• 48-Ball CSP
GENERAL DESCRIPTION
The MX29LV320AT/B is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits and 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320AT/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV320AT/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
The standard MX29LV320AT/B offers access time as
fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV320AT/B has separate chip enable (CE)
and output enable (OE) controls.
P/N:PM1008
REV. 1.1, MAY 28, 2004
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